SEMIX151GB12T4S ? by semikron rev. 23 ? 08.07.2008 1 semix ? 1s gb trench igbt modules SEMIX151GB12T4S features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications ? ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c absolute maximum ratings symbol conditions values unit igbt v ces 1200 v i c t j = 175 c t c =25c 232 a t c =80c 179 a i cnom 150 a i crm i crm = 3xi cnom 450 a v ges -20 ... 20 v t psc v cc = 800 v v ge 20 v t j = 150 c v ces 1200 v 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 189 a t c =80c 141 a i fnom 150 a i frm i frm = 3xi fnom 450 a i fsm t p = 10 ms, sin 180, t j =25c a t j -40 ... 175 c module i t(rms) 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 60 s 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =150a v ge =15v chiplevel t j =25c 1.8 2.05 v t j = 150 c 2.20 2.4 v v ce0 t j =25c 0.8 0.9 v t j = 150 c 0.7 0.8 v r ce v ge =15v t j =25c 6.7 7.7 m ? t j = 150 c 10.0 10.7 m ? v ge(th) v ge =v ce , i c =6ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j = 150 c ma c ies v ce =25v v ge =0v f=1mhz 9.3 nf c oes f=1mhz 0.58 nf c res f=1mhz 0.51 nf q g v ge =- 8 v...+ 15 v 850 nc r gint t j =25c 5.00 ? t d(on) v cc = 600 v i c =150a t j = 150 c r g on =1 ? r g off =1 ? di/dt on = 3900 a/s di/dt off = 2000 a/s 185 ns t r 42 ns e on 16.6 mj t d(off) 410 ns t f 70 ns e off 13.8 mj r th(j-c) per igbt 0.19 k/w
SEMIX151GB12T4S 2 rev. 23 ? 08.07.2008 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f =150a v ge =0v chiplevel t j =25c 2.1 2.5 v t j = 150 c 2.1 2.4 v v f0 t j =25c 1.1 1.3 1.5 v t j = 150 c 0.7 0.9 1.1 v r f t j =25c 4.3 5.6 6.4 m ? t j = 150 c 6.7 7.8 8.5 m ? i rrm i f =150a di/dt off = 3400 a/s v ge =-15v v cc = 600 v t j = 150 c 115 a q rr t j = 150 c 23 c e rr t j = 150 c 8.9 mj r th(j-c)d per diode 0.31 k/w module l ce 16 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c = 125 c 1m ? r th(c-s) per module 0.075 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm w 145 g temperature sensor r 100 t c =100c (r 25 =5 k ? ) 0,493 5% k ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k semix ? 1s gb trench igbt modules SEMIX151GB12T4S features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications ? ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c
SEMIX151GB12T4S ? by semikron rev. 23 ? 08.07.2008 3 fig. 1 typ. output char acteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic
SEMIX151GB12T4S 4 rev. 23 ? 08.07.2008 ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 typ. transient thermal impedance fig. 10 typ. cal diode forward charact., incl. r cc'+ee' fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode recovery charge
SEMIX151GB12T4S ? by semikron rev. 23 ? 08.07.2008 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. semix 1s gb
|
